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2SK3153
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1078-0300 (Previous: ADE-208-733A) Rev.3.00 Sep 07, 2005
Features
* Low on-resistance RDS =65 m typ. * High speed switching * 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM)
D G
1. Gate 2. Drain 3. Source
1
23
S
Rev.3.00 Sep 07, 2005 page 1 of 7
2SK3153
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 EAR Note3 Pch Note2 Tch Tstg Ratings 120 20 15 60 15 15 19 30 150 -55 to +150 Unit V V A A A A mJ W
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 120 20 -- -- 1.0 -- -- 8.5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 65 80 14 860 360 195 15 95 200 130 0.9 100 Max -- -- 10 10 2.5 85 110 -- -- -- -- -- -- -- -- -- -- Unit V V A A V m m S pF pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 120 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 8 A, VGS = 10 VNote4 ID = 8 A, VGS = 4 V Note4 ID = 8 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz ID = 8 A, VGS = 10 V, RL = 3.75
IF = 15 A, VGS = 0 IF = 15 A, VGS = 0 diF/ dt = 50 A/ s
Rev.3.00 Sep 07, 2005 page 2 of 7
2SK3153
Main Characteristics
Power vs. Temperature Derating
40 1000 300 30
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current ID (A)
100 30
PW
20
10 3 1 0.3
D
C
O
1 10 0 s 0 s 1 m s
=
pe
10
ra t (T ion c = Operation in
5 this area is C limited by RDS(on) )
s t) m sho 10 (1
2
0
50
100
150
200
Ta = 25C 0.1 0.1 0.3 1 3
10 30 100 300 1000
Case Temperature TC (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
50 Pulse Test
VGS = 10 V
Typical Transfer Characteristics
20
6V 5V
Drain Current ID (A)
30
Drain Current ID (A)
40
4.5 V
16
VDS = 10 V Pulse Test
4V 3.5 V 3V 2.5 V
12
20
8 25C 75C Tc = -25C
10
4
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage VDS (on) (V)
2.0 Pulse Test
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
1000
Static Drain to Source on State Resistance RDS (on) (m)
Pulse Test
300
1.6
1.2 ID = 15 A 0.8 10 A 5A
100
VGS = 4 V
10 V
30
0.4
10
0
4
8
12
16
20
0.1
0.3
1
3
10
30
100
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.3.00 Sep 07, 2005 page 3 of 7
2SK3153
Static Drain to Source on State Resistance vs. Temperature
200 Pulse Test 160 ID = 15 A 15 A 4V 5 A, 10 A 5 A, 10 A
Static Drain to Source on State Resistance RDS (on) (m)
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance yfs (S)
100 30 Tc = -25C 10 3 1 0.3 0.1 0.1
VDS = 10 V Pulse Test
120
25C 75C
80
40 0 -40
VGS = 10 V
0
40
80
120
160
0.3
1
3
10
30
100
Case Temperature TC (C) Body to Drain Diode Reverse Recovery Time
1000 10000 3000 300
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
VGS = 0 f = 1 MHz
Reverse Recovery Time trr (ns)
Capacitance C (pF)
1000 300
Ciss
100
Coss 100 30 10 Crss
30 di / dt = 50 A / s VGS = 0, Ta = 25C 0.3 1 3 10 30
10 0.1
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V)
ID = 15 A
VGS VDD = 120 V 50 V 25 V
Switching Characteristics
Gate to Source Voltage VGS (V)
20 1000 500
td(off) tf tr td(on)
200
160
16
Switching Time t (ns)
200 100 50 20 10 5 2 1 0.1 0.2
VGS = 10 V, VDD = 30 V PW = 5 s, duty < 1 %
120
12
80
VDD = 120 V 50 V 25 V
8
40
4
VDS
0
20
40
60
80
0 100
0.5 1
2
5
10 20
50
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.3.00 Sep 07, 2005 page 4 of 7
2SK3153
Reverse Drain Current vs. Source to Drain Voltage Maximum Avalanche Energy vs. Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
(A)
20
25
IAP= 15 A VDD = 50 V duty < 0.1 % Rg > 50
Pulse Test
Reverse Drain Current IDR
16
20
12
10 V
VGS = 0
15
8 5V 4
10
5 0 25
0
0.4
0.8
1.2
1.6
2.0
50
75
100
125
150
Source to Drain Voltage
VSD (V)
Channel Temperature Tch (C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25C 1 D=1 0.5 0.3
0.2
0.1
0.1
0.05
ch - c(t) = s (t) * ch - c ch - c = 4.17C/W, Tc = 25C
PDM
D=
PW T
0.03
0.02 1 0.0
PW T
0.01 10
1s
t ho
pu
lse
100
1m
10 m
100 m
1
10
Pulse Width Avalanche Test Circuit
VDS Monitor L IAP Monitor
PW (S) Avalanche Waveform
EAR = 1 2 * L * IAP2 * VDSS VDSS - VDD V(BR)DSS IAP
Rg
D. U. T
VDD
VDS
ID
Vin 15 V 50 0 VDD
Rev.3.00 Sep 07, 2005 page 5 of 7
2SK3153
Switching Time Test Circuit
Vin Monitor D.U.T. RL Vin Vin 10 V 50 VDD = 30 V Vout 10% 10% 10% Vout Monitor
Switching Time Waveforms
90%
90% td(on) tr
90% td(off) tf
Rev.3.00 Sep 07, 2005 page 6 of 7
2SK3153
Package Dimensions
JEITA Package Code
SC-67
RENESAS Code
PRSS0003AD-A
Package Name TO-220FM / TO-220FMV
MASS[Typ.] 1.8g
Unit: mm
10.0 0.3 7.0 0.3 3.2 0.2
2.8 0.2 2.5 0.2
0.6
5.0 0.3
2.0 0.3
1.2 0.2 1.4 0.2
12.0 0.3
4.45 0.3 2.5
0.7 0.1 2.54 0.5 2.54 0.5
0.5 0.1
Ordering Information
Part Name 2SK3153-E Quantity 500 pcs Box (Sack) Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.3.00 Sep 07, 2005 page 7 of 7
14.0 1.0
17.0 0.3
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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Colophon .3.0

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